Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 1.1Ω
• Ultra Low gate charge (typ. Qg = 15nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source voltage Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avala.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP80R240S1 |
Truesemi |
N-Channel MOSFET | |
2 | TSP80R380S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSP80R500S1 |
Truesemi |
N-Channel MOSFET | |
4 | TSP80R600S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSP830M |
Truesemi |
N-Channel MOSFET | |
6 | TSP840M |
Truesemi |
N-Channel MOSFET | |
7 | TSP8A100S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
8 | TSP8N60M |
Truesemi |
600V N-Channel MOSFET | |
9 | TSP8N65M |
Truesemi |
N-Channel MOSFET | |
10 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
11 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
12 | TSP058C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |