Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 0.34Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP80R1K3S1 |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSP80R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP80R500S1 |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSP80R600S1 |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSP830M |
Truesemi |
N-Channel MOSFET |
|
| 6 | TSP840M |
Truesemi |
N-Channel MOSFET |
|
| 7 | TSP8A100S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 8 | TSP8N60M |
Truesemi |
600V N-Channel MOSFET |
|
| 9 | TSP8N65M |
Truesemi |
N-Channel MOSFET |
|
| 10 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 11 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 12 | TSP058C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|