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TSP830M |
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| Part Number | TSP830M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 5.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V • Low gate charge(typical 20nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N... |
| Document |
 TSP830M Data Sheet
PDF 346.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP80R1K3S1 |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSP80R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP80R380S1 |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSP80R500S1 |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSP80R600S1 |
Truesemi |
N-Channel MOSFET |
|