Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET i.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.42Ω
• Ultra Low Gate Charge (typ. Qg = 35nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
TSB10N60S
9.5
* 8
*
IDM Drain Current - Pulsed
(Note 1)
40
*
VGSS
Gate-Source voltage
EAS
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP10N60C |
Thinki Semiconductor |
600V Heatsink N-Channel Type Power MOSFET |
|
| 2 | TSP10N60M |
Truesemi |
600V N-Channel MOSFET |
|
| 3 | TSP10N65M |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 5 | TSP10H45S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 6 | TSP10H60S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 7 | TSP10U100S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 8 | TSP10U120S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 9 | TSP10U45S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 10 | TSP10U60S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 11 | TSP1-WF1608H6-CRSM |
TAITRON |
0603 Package 0.6mm Height Flat Top LED |
|
| 12 | TSP1-XF1005H5A6 |
TAITRON |
0402 Package 0.45mm Height Super Yellow LED |
|