TSP10N60M - Truesemi

TSP10N60M 600V N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.

Features

• 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
• Low gate charge ( typical 48nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability {D GDS TO-220 GD S TO-220F
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● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Diss.