Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 WITH HEATSINK 0 0 25 50 75 100 125 150 LEAD TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TSP10U100S 10 TJ=150oC TJ=125oC 1 0.1 0 TJ=100oC TJ=.
- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-277A (SMPC) TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP10U120S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
2 | TSP10U45S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
3 | TSP10U60S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
4 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
5 | TSP10H45S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
6 | TSP10H60S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
7 | TSP10N60C |
Thinki Semiconductor |
600V Heatsink N-Channel Type Power MOSFET | |
8 | TSP10N60M |
Truesemi |
600V N-Channel MOSFET | |
9 | TSP10N60S |
Truesemi |
N-Channel MOSFET | |
10 | TSP10N65M |
Truesemi |
N-Channel MOSFET | |
11 | TSP1-WF1608H6-CRSM |
TAITRON |
0603 Package 0.6mm Height Flat Top LED | |
12 | TSP1-XF1005H5A6 |
TAITRON |
0402 Package 0.45mm Height Super Yellow LED |