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TSP10N60M |
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| Part Number | TSP10N60M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V • Low gate charge ( typical 48nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Diss... |
| Document |
 TSP10N60M Data Sheet
PDF 263.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP10N60C |
Thinki Semiconductor |
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| 2 | TSP10N60S |
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| 3 | TSP10N65M |
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| 4 | TSP10H200S |
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| 5 | TSP10H45S |
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