This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 20A, 500V, RDS(on) = 0.26 @VGS = 10 V
• Low gate charge ( typical 70nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GD S
TO-247
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSK20N60S |
Truesemi |
N-Channel MOSFET | |
2 | TSK50R240S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSK60R070S1 |
Truesemi |
N-Channel MOSFET | |
4 | TSK60R070SFD |
Truesemi |
N-Channel MOSFET | |
5 | TSK60R190S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSK60R280S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSK65R190S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSK65R300S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSK80R240S1 |
Truesemi |
N-Channel MOSFET | |
10 | TSK80R380S1 |
Truesemi |
N-Channel MOSFET | |
11 | TSK9N90M |
Truesemi |
N-Channel MOSFET | |
12 | TSKS5400 |
Vishay Telefunken |
GaAs Infrared Emitting Diode in Side View Package |