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SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET i.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
VGSS EAS IAR EAR dv/dt
Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSK20N50M |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSK50R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSK60R070S1 |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSK60R070SFD |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSK60R190S1 |
Truesemi |
N-Channel MOSFET |
|
| 6 | TSK60R280S1 |
Truesemi |
N-Channel MOSFET |
|
| 7 | TSK65R190S1 |
Truesemi |
N-Channel MOSFET |
|
| 8 | TSK65R300S1 |
Truesemi |
N-Channel MOSFET |
|
| 9 | TSK80R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 10 | TSK80R380S1 |
Truesemi |
N-Channel MOSFET |
|
| 11 | TSK9N90M |
Truesemi |
N-Channel MOSFET |
|
| 12 | TSKS5400 |
Vishay Telefunken |
GaAs Infrared Emitting Diode in Side View Package |
|