TSK20N50M |
Part Number | TSK20N50M |
Manufacturer | Truesemi |
Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
Features |
• 20A, 500V, RDS(on) = 0.26 @VGS = 10 V • Low gate charge ( typical 70nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GD S TO-247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv... |
Document |
TSK20N50M Data Sheet
PDF 718.73KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSK20N60S |
Truesemi |
N-Channel MOSFET | |
2 | TSK50R240S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSK60R070S1 |
Truesemi |
N-Channel MOSFET | |
4 | TSK60R070SFD |
Truesemi |
N-Channel MOSFET | |
5 | TSK60R190S1 |
Truesemi |
N-Channel MOSFET |