Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.27Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
TO-247
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSK65R190S1 |
Truesemi |
N-Channel MOSFET | |
2 | TSK60R070S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSK60R070SFD |
Truesemi |
N-Channel MOSFET | |
4 | TSK60R190S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSK60R280S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSK20N50M |
Truesemi |
N-Channel MOSFET | |
7 | TSK20N60S |
Truesemi |
N-Channel MOSFET | |
8 | TSK50R240S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSK80R240S1 |
Truesemi |
N-Channel MOSFET | |
10 | TSK80R380S1 |
Truesemi |
N-Channel MOSFET | |
11 | TSK9N90M |
Truesemi |
N-Channel MOSFET | |
12 | TSKS5400 |
Vishay Telefunken |
GaAs Infrared Emitting Diode in Side View Package |