TSD18N20M - Truesemi

TSD18N20M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.

Features

• 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V
• Low gate charge(typical 22nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current TC = 25℃ TC = 100℃ IDM Pulsed Drain Current (Note 1) IAS Single Pulsed Avalanche Current (Note 2) EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Aval.