The TSD05 is a unidirectional TVS protection diode designed for clamping harmful transients such as ESD and surge. The TSD05 is rated to dissipate ESD strikes up to ±30 kV (contact and air gap discharge) and also meets the maximum level specified in the IEC 61000-4-2 international standard (Level 4). for surges, the device can clamp 8/20 μs surges with peak.
• IEC 61000-4-2 level 4 ESD protection:
– ±30 kV contact discharge
– ±30 kV air gap discharge
• IEC 61000-4-5 surge protection:
– 60 A (8/20 µs)
– Low clamping voltage: 9 V at 60 A (8/20 µs)
• IO capacitance:
– 19 pF (typical)
• DC breakdown voltage: 7 V (typical)
• Ultra low leakage current: 50 nA (maximum)
• Low ESD clamping voltage: 7.5 V at 16 A TLP
• Industrial temperature range:
–55°C to +150°C
• Industry standard SOD-323 leaded package
(2.5 mm × 1.2 mm × 0.3 mm)
2 Applications
• 5-V power rails
• USB VBUS
• GPIO
• Push buttons
• Grid infrastructure
• EPOS
• Portable electronics
3 Descr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSD0033-728WT |
TAITRON |
Two Terminals Schottky Barrier Diode | |
2 | TSD035 |
SGS-Thomson Microelectronics |
(TSD035 - TSD1235) Asymmetrical Thyristor | |
3 | TSD05C |
Texas Instruments |
5-V Bidirectional TVS Diode | |
4 | TSD-1251 |
Premier Magnetics |
(TSD-1251 / TSD-515) 2.25 Watt SIP DC/DC Converters | |
5 | TSD-515 |
Premier Magnetics |
(TSD-1251 / TSD-515) 2.25 Watt SIP DC/DC Converters | |
6 | TSD1035 |
SGS-Thomson Microelectronics |
(TSD035 - TSD1235) Asymmetrical Thyristor | |
7 | TSD1235 |
SGS-Thomson Microelectronics |
(TSD035 - TSD1235) Asymmetrical Thyristor | |
8 | TSD1251 |
Premier Magnetics |
(TSD-1251 / TSD-515) 2.25 Watt SIP DC/DC Converters | |
9 | TSD1760 |
Taiwan Semiconductor Company |
Low Vcesat NPN Transistor | |
10 | TSD1858 |
Taiwan Semiconductor |
Low Vcesat NPN Transistor | |
11 | TSD1858CH |
Taiwan Semiconductor |
Low Vcesat NPN Transistor | |
12 | TSD18N20M |
Truesemi |
N-Channel MOSFET |