TSD1858CH - Taiwan Semiconductor

TSD1858CH Low Vcesat NPN Transistor

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness.

Features

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● Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Ordering Information Part No. TSD1858CH C5G Package TO-251 Packing 75pcs / Tube Structure
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● Epitaxial Planar Type NPN Silicon Transistor Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA=25 C Power Dissipation @ TC=25 C Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Operating Junction Temperature Operating Junction and Stora.