TSD1760 - Taiwan Semiconductor Company

TSD1760 Low Vcesat NPN Transistor

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Features

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● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP Ordering Information Part No. TSD1760CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel Structure
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● Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation DC Pulse Ta=25ºC Tc=25ºC Symbol VCBO VCEO VEBO IC PD Limit 50 50 5 3 7 (note 1) 1 (note 2) 15 +150 - 55 to +150 Unit V V V A W o o Operating Junction Temperature TJ Operating Junction an.