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This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V
• Low gate charge(typical 30nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D2-PAK ( TO-263 )
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
.
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|---|---|---|---|---|
| 1 | TSB80R240S1 |
Truesemi |
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| 2 | TSB81BA3-EP |
Texas Instruments |
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| 3 | TSB81BA3D |
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| 4 | TSB81BA3DI |
Texas Instruments |
IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER |
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| 5 | TSB81BA3E |
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IEEE 1394b Three-Port Cable Transceiver/Arbiter |
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| 6 | TSB82AA2-EP |
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| 7 | TSB82AA2B |
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| 8 | TSB82AF15-EP |
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| 9 | TSB83AA23 |
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| 10 | TSB8N60M |
Truesemi |
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| 11 | TSB8N65M |
Truesemi |
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| 12 | TSB-1460A |
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