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TSB840M |
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| Part Number | TSB840M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V • Low gate charge(typical 30nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK ( TO-263 ) Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy ... |
| Document |
 TSB840M Data Sheet
PDF 298.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TSB80R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSB81BA3-EP |
Texas Instruments |
IEEE 1394a 3-Port Cable Transceiver/Arbiter |
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| 3 | TSB81BA3D |
Texas Instruments |
IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER |
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| 4 | TSB81BA3DI |
Texas Instruments |
IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER |
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| 5 | TSB81BA3E |
Texas Instruments |
IEEE 1394b Three-Port Cable Transceiver/Arbiter |
|