This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V
• Low gate charge ( typical 29nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSB8N60M |
Truesemi |
N-Channel MOSFET | |
2 | TSB80R240S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSB81BA3-EP |
Texas Instruments |
IEEE 1394a 3-Port Cable Transceiver/Arbiter | |
4 | TSB81BA3D |
Texas Instruments |
IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER | |
5 | TSB81BA3DI |
Texas Instruments |
IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER | |
6 | TSB81BA3E |
Texas Instruments |
IEEE 1394b Three-Port Cable Transceiver/Arbiter | |
7 | TSB82AA2-EP |
Texas Instruments |
1394b OHCI-Lynx Controller | |
8 | TSB82AA2B |
Texas Instruments |
1394b OHCI-Lynx Controller | |
9 | TSB82AF15-EP |
Texas Instruments |
PCI Express-Based IEEE 1394b OHCI Host Controller | |
10 | TSB83AA23 |
Texas Instruments |
IEEE Std 1394b-2002 PHY and OHCI Link-Device | |
11 | TSB840M |
Truesemi |
N-Channel MOSFET | |
12 | TSB-1460A |
JLI |
Unidirectional Back Electret Condenser Microphone |