Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 0.22Ω
• Ultra Low gate charge (typ. Qg = 70nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source voltage Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
R.
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|---|---|---|---|---|
| 1 | TSB81BA3-EP |
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| 2 | TSB81BA3D |
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| 3 | TSB81BA3DI |
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| 4 | TSB81BA3E |
Texas Instruments |
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| 5 | TSB82AA2-EP |
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| 6 | TSB82AA2B |
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| 7 | TSB82AF15-EP |
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| 8 | TSB83AA23 |
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| 9 | TSB840M |
Truesemi |
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| 10 | TSB8N60M |
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| 11 | TSB8N65M |
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| 12 | TSB-1460A |
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