SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET i.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
VGSS EAS IAR EAR dv/dt
Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSA20N50M |
Truesemi |
500V N-Channel MOSFET | |
2 | TSA23N50M |
Truesemi |
N-Channel MOSFET | |
3 | TSA24N50M |
Truesemi |
500V N-Channel MOSFET | |
4 | TSA24N50MR |
Truesemi |
N-Channel MOSFET | |
5 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER | |
6 | TSA021 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
7 | TSA048 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
8 | TSA1001 |
ST Microelectronics |
A/D CONVERTER | |
9 | TSA1002 |
STMicroelectronics |
50mW A/D CONVERTER | |
10 | TSA1005 |
ST Microelectronics |
A/D CONVERTER | |
11 | TSA1015 |
TP |
PNP SILICON TRANSISTOR | |
12 | TSA1036 |
TSC |
General Purpose PNP Transistor |