This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 24A,500V,Max.RDS(on)=0.2 Ω @ VGS =10V
• Low gate charge(typical 90nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS IAR EAR dv/dt
Drain-Source Voltage Gate-Source Voltage
Drain Current
Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC = 25℃ TC = 100.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSA24N50M |
Truesemi |
500V N-Channel MOSFET | |
2 | TSA20N50M |
Truesemi |
500V N-Channel MOSFET | |
3 | TSA20N60S |
Truesemi |
N-Channel MOSFET | |
4 | TSA23N50M |
Truesemi |
N-Channel MOSFET | |
5 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER | |
6 | TSA021 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
7 | TSA048 |
TNK |
Flyback Transformer Surface Mount Magnetics | |
8 | TSA1001 |
ST Microelectronics |
A/D CONVERTER | |
9 | TSA1002 |
STMicroelectronics |
50mW A/D CONVERTER | |
10 | TSA1005 |
ST Microelectronics |
A/D CONVERTER | |
11 | TSA1015 |
TP |
PNP SILICON TRANSISTOR | |
12 | TSA1036 |
TSC |
General Purpose PNP Transistor |