TSA20N50M - Truesemi

TSA20N50M 500V N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.

Features

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• 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V Low gate charge ( typical 70nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability { D
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● {S TO-3P or TO247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL TC = 25°Cunless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) TSA20N50M 500 20 13 80 ± 30 (Note 2) (Note 1) (Note 3) Units V A A A V mJ mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Ene.