TSA20N60S |
Part Number | TSA20N60S |
Manufacturer | Truesemi |
Description | SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technol... |
Features |
• 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low Gate Charge (typ. Qg = 63nC) • 100% avalanche tested • Rohs Compliant Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current ... |
Document |
TSA20N60S Data Sheet
PDF 943.23KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSA20N50M |
Truesemi |
500V N-Channel MOSFET | |
2 | TSA23N50M |
Truesemi |
N-Channel MOSFET | |
3 | TSA24N50M |
Truesemi |
500V N-Channel MOSFET | |
4 | TSA24N50MR |
Truesemi |
N-Channel MOSFET | |
5 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER |