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TSA20N50M |
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| Part Number | TSA20N50M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• • • • • • 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V Low gate charge ( typical 70nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability { D ● ◀ G { G D S ▲ ● ● {S TO-3P or TO247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL TC = 25°Cunless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) TSA20N50M 500 20 13 80 ± 30 (Note 2) (Note 1) (Note 3) Units V A A A V mJ mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Ene... |
| Document |
 TSA20N50M Data Sheet
PDF 722.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSA20N60S |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSA23N50M |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSA24N50M |
Truesemi |
500V N-Channel MOSFET |
|
| 4 | TSA24N50MR |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER |
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