TPCS8212 - Toshiba Semiconductor

TPCS8212 Silicon N Channel MOS Type (U-MOSIII)

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications • • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode:.

Features

energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) JEDEC JEITA TOSHIBA W ― ― 2-3R1E 0.75 Weight: 0.035 g (typ.) 0.6 Circuit Configuration 0.35 8 46.8 6 0.075 150 −55~150 mJ A mJ °C °C 1 2 3 4 7 6 5 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-17 TPCS8212 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-.