TPCC8008 - Toshiba Semiconductor

TPCC8008 Field Effect Transistor Silicon N-Channel MOS Type

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8008 Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 mΩ (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V.

Features

te 4) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Weight: 0.02 g (typ.) Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“H.