TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: R.
JEITA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25 Channel temperature Storage temperature range ) (Note 4) EAS IAR EAR Tch Tstg 176 26 2.74 150 −55 to 150 mJ A mJ °C °C TOSHIBA Weight: 0.02 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCC8001-H |
Toshiba Semiconductor |
Field Effect Transistor | |
2 | TPCC8002-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TPCC8003-H |
Toshiba Semiconductor |
Field Effect Transistor | |
4 | TPCC8006-H |
Toshiba Semiconductor |
Field Effect Transistor | |
5 | TPCC8007 |
Toshiba Semiconductor |
MOSFETs | |
6 | TPCC8008 |
Toshiba Semiconductor |
Field Effect Transistor Silicon N-Channel MOS Type | |
7 | TPCC8009 |
Toshiba Semiconductor |
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications | |
8 | TPCC8061-H |
Toshiba |
Field Effect Transistor | |
9 | TPCC8062-H |
Toshiba |
MOSFETs | |
10 | TPCC8064-H |
Toshiba |
MOSFETs | |
11 | TPCC8065-H |
Toshiba |
Field Effect Transistor | |
12 | TPCC8066-H |
Toshiba |
MOSFETs |