TPCC8001-H - Toshiba Semiconductor

TPCC8001-H Field Effect Transistor

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8001-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: R.

Features

= 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25 ) (Note 4) Channel temperature Storage temperature range Weight: 0.02 g (typ.) mJ °C °C Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te.