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TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS) TPCC8007 1. Applications • • Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID .
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Ava.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TPCC8001-H |
Toshiba Semiconductor |
Field Effect Transistor |
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| 2 | TPCC8002-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TPCC8003-H |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 4 | TPCC8005-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TPCC8006-H |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 6 | TPCC8008 |
Toshiba Semiconductor |
Field Effect Transistor Silicon N-Channel MOS Type |
|
| 7 | TPCC8009 |
Toshiba Semiconductor |
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
|
| 8 | TPCC8061-H |
Toshiba |
Field Effect Transistor |
|
| 9 | TPCC8062-H |
Toshiba |
MOSFETs |
|
| 10 | TPCC8064-H |
Toshiba |
MOSFETs |
|
| 11 | TPCC8065-H |
Toshiba |
Field Effect Transistor |
|
| 12 | TPCC8066-H |
Toshiba |
MOSFETs |
|