TPC8118 - Toshiba Semiconductor

TPC8118 P-Channel MOSFET

www.DataSheet4U.com TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC Applications Unit: mm • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 .

Features

― 2-6J1B JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“.