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TN5415A Discrete POWER & Signal Technologies TN5415A C TO-226 BE PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage .
ipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TN5415A 1.0 8.0 125 50
Units
W mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
TN5415A
PNP High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEX ICEO IEBO Collector-Emitter Breakdown Voltage
* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff C.
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