This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristi.
► Low threshold (2.0V max.)
► High input impedance and high gain
► Free from secondary breakdown
► Low CISS and fast switching speeds
Applications
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipola.
The TN5325 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TN5335 |
Supertex Inc |
N-Channel Vertical DMOS FET | |
2 | TN5015H-6G |
STMicroelectronics |
High temperature 50A SCRs | |
3 | TN5015H-6I |
STMicroelectronics |
High temperature 50A SCRs | |
4 | TN5015H-6T |
STMicroelectronics |
High temperature 50A SCRs | |
5 | TN5050H-12WY |
STMicroelectronics |
50A 1200V automotive grade thyristor | |
6 | TN50A |
Topstek |
Current Transducers | |
7 | TN5415A |
Fairchild Semiconductor |
PNP High Voltage Amplifier | |
8 | TN5C060 |
Intel Corporation |
16 MACROCELL CMOS PLD | |
9 | TN5C090 |
Intel Corporation |
24 MACROCELL CMOS PLD | |
10 | TN5C180 |
Intel Corporation |
48 MACROCELL CMOS PLD | |
11 | TN5D01A |
Sanyo Semicon Device |
Separately-Excited Step-Down Switching Regulator | |
12 | TN5D41 |
Sanyo Semicon Device |
Separately-Excited Step-Down Switching Regulator |