Packaged in a non-isolated TO-220AB, this device offers high thermal performance during operation of up to 50 A, thanks to a junction temperature of up to 150 °C. Its noise immunity (dV/dt = 500 V/μs) trade-off versus gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allow the design of robust and compact control circuits .
High junction temperature: Tj = 150 °C
High noise immunity up to 150 °C
Gate triggering current IGT = 15 mA
Peak off-state voltage VDRM/VRRM = 600 V
High turn-on current rise dI/dt = 100 A/µs
ECOPACK®2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Solid state relays
High temperature 50 A SCRs
Datasheet - production data
Description
Packaged in a non-isolated TO-220AB, this device offers high thermal performance during operation of up to 50 A, thanks to a junction temperature of u.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TN5015H-6G |
STMicroelectronics |
High temperature 50A SCRs | |
2 | TN5015H-6I |
STMicroelectronics |
High temperature 50A SCRs | |
3 | TN5050H-12WY |
STMicroelectronics |
50A 1200V automotive grade thyristor | |
4 | TN50A |
Topstek |
Current Transducers | |
5 | TN5325 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | TN5325 |
Microchip |
N-Channel Vertical DMOS FET | |
7 | TN5335 |
Supertex Inc |
N-Channel Vertical DMOS FET | |
8 | TN5415A |
Fairchild Semiconductor |
PNP High Voltage Amplifier | |
9 | TN5C060 |
Intel Corporation |
16 MACROCELL CMOS PLD | |
10 | TN5C090 |
Intel Corporation |
24 MACROCELL CMOS PLD | |
11 | TN5C180 |
Intel Corporation |
48 MACROCELL CMOS PLD | |
12 | TN5D01A |
Sanyo Semicon Device |
Separately-Excited Step-Down Switching Regulator |