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TN5335 - Supertex Inc

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TN5335 N-Channel Vertical DMOS FET

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characterist.

Features



► Low threshold

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

► Complementary N- and P-channel devices Applications

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturin.

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