This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characterist.
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► Low threshold
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► High input impedance
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► Low input capacitance
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► Fast switching speeds
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► Low on-resistance
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► Free from secondary breakdown
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► Low input and output leakage
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► Complementary N- and P-channel devices
Applications
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► Logic level interfaces - ideal for TTL and CMOS
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► Solid state relays
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► Battery operated systems
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► Photo voltaic drives
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► Analog switches
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► General purpose line drivers
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► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TN5325 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
2 | TN5325 |
Microchip |
N-Channel Vertical DMOS FET | |
3 | TN5015H-6G |
STMicroelectronics |
High temperature 50A SCRs | |
4 | TN5015H-6I |
STMicroelectronics |
High temperature 50A SCRs | |
5 | TN5015H-6T |
STMicroelectronics |
High temperature 50A SCRs | |
6 | TN5050H-12WY |
STMicroelectronics |
50A 1200V automotive grade thyristor | |
7 | TN50A |
Topstek |
Current Transducers | |
8 | TN5415A |
Fairchild Semiconductor |
PNP High Voltage Amplifier | |
9 | TN5C060 |
Intel Corporation |
16 MACROCELL CMOS PLD | |
10 | TN5C090 |
Intel Corporation |
24 MACROCELL CMOS PLD | |
11 | TN5C180 |
Intel Corporation |
48 MACROCELL CMOS PLD | |
12 | TN5D01A |
Sanyo Semicon Device |
Separately-Excited Step-Down Switching Regulator |