This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characterist.
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► Low threshold - 1.6V max.
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► High input impedance
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► Low input capacitance - 130pF typical
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► Fast switching speeds
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► Low on-resistance guaranteed at VGS = 2, 3, and 5V
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► Free from secondary breakdown
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► Low input and output leakage
Applications
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► Logic level interfaces
– ideal for TTL and CMOS
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► Solid state relays
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► Battery operated systems
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► Photo voltaic drives
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► Analog switches
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► General purpose line drivers
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► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silico.
The TN0702 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven sil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TN0102 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
2 | TN0104 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
3 | TN0104 |
Microchip |
N-Channel Vertical DMOS FET | |
4 | TN0106 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
5 | TN0106 |
Microchip |
N-Channel Vertical DMOS FET | |
6 | TN0110 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
7 | TN0110 |
Microchip |
N-Channel Vertical DMOS FET | |
8 | TN01A |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
9 | TN01L |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
10 | TN0200K |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFETs | |
11 | TN0200T |
Vishay Siliconix |
Specification Comparison TN0200K vs. TN0200T | |
12 | TN0200TS |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFETs |