TN0102 TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 20V RDS(ON) (max) 1.8Ω VGS(th) (max) 1.6V ID(ON) (min) 2.0A 40V 1.8Ω 1.6V 2.0A 40V 2.0Ω 1.6V 2.0A * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available Features Low threshold —1.6V max. H.
Low threshold —1.6V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
Applications
Logic level interfaces
– ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage
BVDSS BVDGS ± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature
*
300°C
* For .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TN0104 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
2 | TN0104 |
Microchip |
N-Channel Vertical DMOS FET | |
3 | TN0106 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
4 | TN0106 |
Microchip |
N-Channel Vertical DMOS FET | |
5 | TN0110 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | TN0110 |
Microchip |
N-Channel Vertical DMOS FET | |
7 | TN01A |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
8 | TN01L |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
9 | TN0200K |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFETs | |
10 | TN0200T |
Vishay Siliconix |
Specification Comparison TN0200K vs. TN0200T | |
11 | TN0200TS |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFETs | |
12 | TN0201L |
Vishay Siliconix |
N-Channel 20-/ 30-/ 40-V (D-S) MOSFETs |