TN0104 - Microchip

TN0104 N-Channel Vertical DMOS FET

The TN0104 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of al.

Features

• 1.6V Maximum Low Threshold
• High Input Impedance
• Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage Applications
• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Battery-Operated Systems
• Photovoltaic Drives
• Analog Switches
• General Purpose Line Drivers
• Telecommunication Switches General Description The TN0104 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a dev.