"§upertexinc. TN01L N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS 20V 40V ROS(ON) (max) 1.8g 1.8g IO(ON) (min) 2.0A 2.0A Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complem.
0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices
TO
·39
Order Number I Package TO
·92
TN0102N2
TN0102N3
TN0104N2
TN0104N3
DICE TN0102ND TN0104ND
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TN0102 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
2 | TN0104 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
3 | TN0104 |
Microchip |
N-Channel Vertical DMOS FET | |
4 | TN0106 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
5 | TN0106 |
Microchip |
N-Channel Vertical DMOS FET | |
6 | TN0110 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
7 | TN0110 |
Microchip |
N-Channel Vertical DMOS FET | |
8 | TN01A |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
9 | TN0200K |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFETs | |
10 | TN0200T |
Vishay Siliconix |
Specification Comparison TN0200K vs. TN0200T | |
11 | TN0200TS |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFETs | |
12 | TN0201L |
Vishay Siliconix |
N-Channel 20-/ 30-/ 40-V (D-S) MOSFETs |