TMS418169A - Texas Instruments

TMS418169A DYNAMIC RANDOM-ACCESS MEMORIES

PIN NOMENCLATURE The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of A[0:9] DQ[0:15] LCAS UCAS Address Inputs Data In / Data Out Lower Column-Address Strobe Upper Column-Address Strobe 16 bits each. They employ state-of-the-art NC No Internal Connection technology for high perform.

Features

maximum RAS access times of 50-, 60-, and 70 ns, and the OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable TMS428169A features maximum RAS access times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS418169A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). The TMS428169A is offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix). These packages are designed for operation from 0°C to 70°C. Please be aware .