TMS418160A - Texas Instruments

TMS418160A DYNAMIC RANDOM-ACCESS MEMORIES

The TMS418160A is a 16 777 216-bit dynamic random-access memory (DRAM) device organized as 1 048 576 words of 16 bits. It employs state-of-the-art technology for high performance, reliability, and low power at low cost. This device features maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on chip to simplify system .

Features

maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS418160A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). This package is designed for operation from 0° to 70°C. TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C
  – AUGUST 1996
  – REVISED OCTOBER 1997 DZ PACKAGE ( TOP VIEW ) VDD DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 NC NC W RAS NC NC A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 VSS 41 DQ1.