TMS416160 - Texas Instruments

TMS416160 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS

The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply‡ Ground Write Enable bits each. The TMS4xx160P series is a similar ‡ See Available Options Table. set of high-speed, low-power, self-refresh, 16 777 2.

Features

d Using the Texas Instruments Enhanced Performance Implanted CMOS (EPIC™) Technology DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC 3 4 5 6 7 8 9 10 11 NC NC W RAS A11† A10† A0 A1 15 16 17 18 19 20 21 22 48 DQ14 47 DQ13 46 DQ12 45 VSS 44 DQ11 43 DQ10 42 DQ9 41 DQ8 40 NC 36 NC 35 LCAS 34 UCAS 33 OE 32 A9 31 A8 30 A7 29 A6 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC W RAS A11† A10† A0 A1 A2 A3 VCC 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 40 DQ14 39 DQ13 38 DQ12 37 VSS 36 DQ11 35 DQ10 34 DQ9 33 DQ8 32 NC 31 LCAS 30 UCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 VSS AVAILABLE OPTIONS A2 23 28.