TMS418169 - Texas Instruments

TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

† A10 and A11 are NC for TMS418169. The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access times of 60 ns, 70.

Features

2 VSS 41 DQ15 40 DQ14 39 DQ13 38 DQ12 37 VSS 36 DQ11 35 DQ10 34 DQ9 33 DQ8 32 NC 31 LCAS 30 UCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 VSS description † A10 and A11 are NC for TMS418169. The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on-chip to simplify s.