TMS417809 - Texas Instruments

TMS417809 HIGH-SPEED DRAMS

The TMS41x809 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 2 097 152 words of eight bits each. It employs TI’s state-of-the-art EPIC technology for high performance, reliability, and low power. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are l.

Features

bits each. It employs TI’s state-of-the-art EPIC technology for high performance, reliability, and low power. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS41x809 is offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). This package is characterized for operation from 0°C to 70°C. SMKS885A
  – DECEMBER 1995
  – REVISED MARCH 1996 DZ PACKAGE ( TOP VIEW ) VCC DQ0 DQ1 DQ2 DQ3 W RAS A11† A10 A0 A1 A2 A3 VCC 1 2 3.