DEVICE The TMS41x409A and TMS42x409A series are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 4 194 304 words of four bits each. These devices feature maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility..
wer Dissipation 3-State Unlatched Output High-Reliability Plastic 24 / 26-Lead 300-Mil-Wide Surface-Mount Small-Outline J-Lead (SOJ) Package (DJ Suffix) and 24/26-Lead 300-Mil-Wide Surface-Mount Thin Small-Outline Package (TSOP) (DGA Suffix) Operating Free-Air Temperature Range 0°C to 70°C
PIN NOMENCLATURE A0
– A11† DQ1
– DQ4 CAS NC OE RAS VCC VSS W Address Inputs Data In / Data Out Column-Address Strobe No Internal Connection Output Enable Row-Address Strobe 5-V or 3.3-V Supply‡ Ground Write Enable
† A11 is NC for TMS417409A and TMS427409A. ‡ See Available Options Table
AVAILABLE OPTIONS
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The TMS41x409A and TMS42x409A series are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 4 194 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TMS417400 |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS | |
2 | TMS417400A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
3 | TMS417400P |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS | |
4 | TMS417800 |
Texas Instruments |
HIGH-SPEED DRAMS | |
5 | TMS417800A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
6 | TMS417809 |
Texas Instruments |
HIGH-SPEED DRAMS | |
7 | TMS417809A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
8 | TMS4116 |
Texas Instruments Inc |
16384-Bin Dynamic Random-Access Memory | |
9 | TMS416100 |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
10 | TMS416100P |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
11 | TMS416160 |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS | |
12 | TMS416160P |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |