The TMS41x400A is a set of 16 777 216-bit dynamic random-access memory (DRAMs) devices organized as 4 194 304 words of 4 bits each. The TMS41x400A employs state-of-the-art technology for high performance, reliability, and low power. These devices feature maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on-chip to sim.
W RAS A11† 1 2 3 4 5 6 26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE 21 A9 A10 A0 A1 A2 A3 VCC 8 9 10 11 12 13 19 A8 18 A7 17 A6 16 A5 15 A4 14 VSS PIN NOMENCLATURE A[0: 11]† CAS DQ[1:4] OE NC RAS VCC VSS W Address Inputs Column-Address Strobe Data In / Data Out Output Enable No Internal Connection Row-Address Strobe 5-V Supply Ground Write Enable † A11 is NC for TMS417400A description The TMS41x400A is a set of 16 777 216-bit dynamic random-access memory (DRAMs) devices organized as 4 194 304 words of 4 bits each. The TMS41x400A employs state-of-the-art technology for high performance, reliabi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TMS417400 |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS | |
2 | TMS417400P |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS | |
3 | TMS417409A |
National Semiconductor |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES | |
4 | TMS417409A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
5 | TMS417800 |
Texas Instruments |
HIGH-SPEED DRAMS | |
6 | TMS417800A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
7 | TMS417809 |
Texas Instruments |
HIGH-SPEED DRAMS | |
8 | TMS417809A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
9 | TMS4116 |
Texas Instruments Inc |
16384-Bin Dynamic Random-Access Memory | |
10 | TMS416100 |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
11 | TMS416100P |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
12 | TMS416160 |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |