TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: .
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to a.
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8A60DA,ITK8A60DA ·FEATURES ·Low drain-source on-resistance: RD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK8A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK8A60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK8A65D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK8A65D |
INCHANGE |
N-Channel MOSFET | |
5 | TK8A65W |
INCHANGE |
N-Channel MOSFET | |
6 | TK8A65W |
Toshiba |
N-Channel MOSFET | |
7 | TK8A10K3 |
Toshiba Semiconductor |
Field Effect Transistor | |
8 | TK8A25DA |
Toshiba |
Silicon N-Channel MOSFET | |
9 | TK8A25DA |
INCHANGE |
N-Channel MOSFET | |
10 | TK8A45D |
INCHANGE |
N-Channel MOSFET | |
11 | TK8A45D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | TK8A50D |
Toshiba |
N-Channel MOSFET |