TK8A60W - Toshiba Semiconductor

TK8A60W Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8A60W 1: G.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current .