TK8A10K3 - Toshiba Semiconductor

TK8A10K3 Field Effect Transistor

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications • • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic.

Features

eliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 100 µH, RG = 25 Ω, IAR = 8 A Thermal Characteristi.