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TK8A60DA |
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| Part Number | TK8A60DA |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8A60DA，ITK8A60DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
| Document |
 TK8A60DA Data Sheet
PDF 248.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK8A60DA |
Toshiba Semiconductor |
Transistor |
|
| 2 | TK8A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK8A60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK8A65D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TK8A65D |
INCHANGE |
N-Channel MOSFET |
|