TK80S06K3L - Toshiba

TK80S06K3L Silicon N-Channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS) TK80S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10.

Features

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK80S06K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.4.0 TK80S06K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID .